Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-29
2009-08-11
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S272000, C438S589000, C257SE29201, C257SE29257, C257SE29260
Reexamination Certificate
active
07572704
ABSTRACT:
A method for forming a metal pattern in a semiconductor device includes forming an etch stop layer over a semi-finished substrate including a metal layer, forming a hard mask over the etch stop layer, etching the hard mask to form a hard mask pattern exposing the etch stop layer, and etching the etch stop layer and the metal layer using the hard mask pattern.
REFERENCES:
patent: 6465343 (2002-10-01), Wang
patent: 6479391 (2002-11-01), Morrow et al.
patent: 7074661 (2006-07-01), Cho et al.
patent: 7078748 (2006-07-01), Goldbach et al.
patent: 7138323 (2006-11-01), Kavalieros et al.
patent: 7235478 (2007-06-01), Geng et al.
patent: 2005/0095797 (2005-05-01), Cho et al.
patent: 2006/0046448 (2006-03-01), Barns et al.
patent: 2006/0199321 (2006-09-01), Lo et al.
patent: 2007/0037372 (2007-02-01), Kavalieros et al.
patent: 2008/0081449 (2008-04-01), Cho et al.
patent: 1797715 (2006-07-01), None
patent: 1020020010296 (2002-02-01), None
patent: 1020050040582 (2005-05-01), None
patent: 1020060133166 (2006-12-01), None
Oh Sang-Rok
Yu Jae-Seon
Blakely & Sokoloff, Taylor & Zafman
Estrada Michelle
Hynix / Semiconductor Inc.
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