Method for forming metal lines by sputtering

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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Details

438645, 438649, 438653, 438655, 20419217, C23C 1434

Patent

active

056606966

ABSTRACT:
A method of forming metal lines such as titanium and aluminum on a semiconductor wafer by sputtering at a high temperature, preferably in the range of approximately 500.degree. C. to 800.degree. C. This method decreases the contact resistance between the layers while reducing the number of processing steps.

REFERENCES:
patent: 5427666 (1995-06-01), Mueller et al.

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