Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-26
2005-04-26
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S626000, C438S631000, C438S634000, C438S637000, C438S638000
Reexamination Certificate
active
06884713
ABSTRACT:
Methods for forming metal line of semiconductor device wherein via contact plug is formed without the deposition process of Ti/TiN liner layer and conductive layer filling a via contact hole so that the formation processes of a conductive layer for lower metal line and a conductive layer for via contact plug can be performed successively without interruption is disclosed. The method comprises the steps of: (a) sequentially forming a conductive layer for lower metal line and a conductive layer for via contact plug on a planarized first interlayer insulating film having a contact plug; (b) etching the conductive layer for via contact plug and the conductive layer for lower metal line using lower metal line mask to form a lower metal line; (c) forming a second interlayer insulating film on the entire surface; (d) etching the second interlayer insulating film and the conductive layer for via contact plug using a via contact mask to form a via contact plug; (e) forming a third interlayer insulating film on the entire surface; (f) performing a planarization process to expose a upper surface of the via contact plug; and (g) forming an upper metal line electrically connected to the via contact plug.
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Brewster William M.
Chaudhuri Olik
Heller Ehrman White and McAuliffe LLP
Hynix / Semiconductor Inc.
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