Method for forming metal interconnects and reducing metal...

Details Method for forming metal interconnects and reducing metal... Method for forming metal interconnects and reducing metal...

2008-10-22

2009-11-10

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C257SE21575

Reexamination Certificate

active

07615489

ABSTRACT:
A method for forming metal interconnects on a substrate is described. A substrate with a dielectric layer is positioned within a processing chamber. A first barrier layer is deposited on the dielectric layer and within a plurality of vias of the dielectric layer, wherein the first barrier layer includes beveled edges extending from a field of the substrate to a sidewall surface of each via. The first barrier layer and the dielectric layer are etched to form a recess at each beveled edge. A second barrier layer is deposited over the recess. A metal seed layer deposited over the first barrier layer, the second barrier layer, and within the recess.

REFERENCES:
patent: 6117781 (2000-09-01), Lukanc et al.
patent: 2006/0258142 (2006-11-01), Haider et al.

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