Method for forming metal interconnect of semiconductor device

Details Method for forming metal interconnect of semiconductor device Method for forming metal interconnect of semiconductor device

2006-11-07

2006-11-07

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S631000

Reexamination Certificate

active

07132364

ABSTRACT:
A method for forming a metal interconnect of a semiconductor device defined by a fine trench or via is disclosed. The method includes forming a first interconnect insulating layer on a substrate. A via hole is formed on a predetermined portion of the first interconnect insulating layer. A second interconnect insulating layer is formed on the first interconnect insulating layer. The second interconnect insulating layer is planarized. A hard mask layer is formed on the second interconnect insulating layer. The hard mask layer is patterned to remove selective portions. A trench is formed by etching the second interconnect insulating layer. A metal interconnect is formed in the trench.

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