Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-01-18
2011-01-18
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S183000, C438S199000, C438S216000, C438S275000, C257S369000, C257S407000, C257S410000, C257S412000, C257SE29134, C257SE21444, C257S388000
Reexamination Certificate
active
07871915
ABSTRACT:
The present disclosure provides a method of fabricating a semiconductor device that includes providing a substrate having a first region and a second region, forming first and second gate stacks in the first and second regions, respectively, the first gate stack including a first dummy gate and the second gate stack including a second dummy gate, removing the first dummy gate in the first gate stack thereby forming a first trench and removing the second dummy gate in the second gate stack thereby forming a second trench, forming a first metal layer in the first trench and in the second trench, removing at least a portion of the first metal layer in the first trench, forming a second metal layer in the remainder of the first trench and in the remainder of the second trench, reflowing the second metal layer, and performing a chemical mechanical polishing (CMP).
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Chen Chi-Chun
Chen Chien-Hao
Hou Yong-Tian
Lim Peng-Soon
Dehne Aaron A
Haynes and Boone LLP
Nguyen Ha Tran T
Taiwan Semiconductor Manufacturing Company , Ltd.
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