Method for forming metal contact of semiconductor device

Details Method for forming metal contact of semiconductor device Method for forming metal contact of semiconductor device

2005-01-11

2005-01-11

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S256000, C438S396000, C438S399000, C438S597000, C438S618000, C438S629000, C438S672000, C438S675000, C438S676000, C438S680000, C438S685000

Reexamination Certificate

active

06841442

ABSTRACT:
Disclosed is a method for forming a metal contact of a semiconductor device. The method includes the steps of preparing a substrate formed with a tungsten bit line, forming an insulating interlayer on an entire surface of the substrate, forming a contact hole expositing the tungsten bit line, depositing a first tungsten layer on the insulating interlayer through an IMP process, depositing a second tungsten layer on the first tungsten layer through a CMP process, and performing an etch back process with respect to the second tungsten layer. After depositing the first tungsten layer through the IMP process, the second tungsten layer is deposited trough the CVD process without forming the barrier metal. Thus, contact filling failure is prevented when CVD tungsten is deposited, thereby preventing metal contact failure while improving reliability and a yield rate of the semiconductor devices.

REFERENCES:
patent: 6180522 (2001-01-01), Hong
patent: 6688584 (2004-02-01), Iyer et al.
patent: 20010021579 (2001-09-01), Hu et al.
patent: 20020090785 (2002-07-01), Hu et al.
patent: 20040058519 (2004-03-01), Wu et al.

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