Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-08
2009-06-23
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C257SE21509
Reexamination Certificate
active
07550375
ABSTRACT:
A method for forming metal bumps is disclosed. Steps of the method include supplying a substrate containing a plurality of pads; forming a first photoresist layer on the substrate, herein the first photoresist layer covers the pads; performing a planarization step to remove a portion of the first photoresist layer so as to expose the pads; forming a conductive layer on the first photoresist layer and the pads; electroplating a metal layer on the conductive layer; forming a patterned second photoresist layer on the metal layer; a portion of the metal layer and the conductive layer which are not covered by the patterned second photoresist layer is removed by using the patterned second photoresist layer as a mask; removing the patterned second photoresist layer; and forming a solder mask on the substrate, wherein the solder mask has a plurality of openings to expose the metal layer located on the pads.
REFERENCES:
patent: 5393697 (1995-02-01), Chang et al.
patent: 5707902 (1998-01-01), Chang et al.
patent: 6024274 (2000-02-01), Chang et al.
patent: 6114187 (2000-09-01), Hayes
patent: 6249051 (2001-06-01), Chang et al.
patent: 6660625 (2003-12-01), Lee et al.
patent: 6713377 (2004-03-01), Lee et al.
patent: 6743660 (2004-06-01), Lee et al.
patent: 6759318 (2004-07-01), Chang
patent: 6809020 (2004-10-01), Sakurai et al.
patent: 6828221 (2004-12-01), Iijima et al.
patent: 6929979 (2005-08-01), Andoh
patent: 7180184 (2007-02-01), Shen
patent: 7187078 (2007-03-01), Lin et al.
patent: 2005/0142836 (2005-06-01), Haze
Chang Kuo-Hua
Chang Shuo-Hsun
Chen Chih-Cheng
Huang Chi-Chih
Wang Sheng-Ming
Advanced Semiconductor Engineering Inc.
Rabin & Berdo PC
Zarneke David A
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