Method for forming local interconnect metal structures via the a

Details Method for forming local interconnect metal structures via the a Method for forming local interconnect metal structures via the a

1998-03-16

2000-02-01

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438695, 438696, 438700, 438703, C23C 1642

Patent

active

06020267&

ABSTRACT:
A method for fabricating local interconnect metal structures, overlying metal filled via hole openings, has been developed. This invention features the creation of an aluminum based interconnect structure, comprised with an underlying titanium nitride layer. The titanium nitride layer overlays a metal filled via hole, during a photolithographic exposure that is used for formation of the photoresist shapes that are needed for local interconnect metal structure patterning. The anti-reflective properties of the titanium nitride layer allow the formation of the resulting photoresist shapes to be defined without interfering reflections from the underlying metal plug.

REFERENCES:
patent: 5360995 (1994-11-01), Grass
patent: 5403781 (1995-04-01), Matsumoto et al.
patent: 5449639 (1995-09-01), Wei et al.
patent: 5451543 (1995-09-01), Woo et al.
patent: 5451551 (1995-09-01), Kirshnan et al.
patent: 5641710 (1997-06-01), Wang et al.
patent: 5801096 (1998-09-01), Lee et al.

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