Method for forming interlayer insulation film in...

Details Method for forming interlayer insulation film in... Method for forming interlayer insulation film in...

2007-01-09

2007-01-09

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S653000, C438S637000

Reexamination Certificate

active

10878317

ABSTRACT:
The present invention discloses a method for forming an interlayer insulation film in a semiconductor device, comprising the steps of: sequentially forming a porous low dielectric insulation film and a capping layer on the semiconductor substrate on which a few elements of the semiconductor device have been formed; and forming damascene patterns in the porous low dielectric insulation film by an etching process, and forming a protection film for closing pores exposed during the etching process at the same time.

REFERENCES:
patent: 6492276 (2002-12-01), Huang
patent: 6844266 (2005-01-01), Maex et al.

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