Method for forming interconnects for semiconductor devices using

Details Method for forming interconnects for semiconductor devices using Method for forming interconnects for semiconductor devices using

1996-12-04

2000-12-05

Thomas, Tom

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438637, 438642, 438643, 438648, 438649, 438652, 438655, 438656, 438663, 438664, 257750, 257751, 257754, 257757, H01L 2144, H01L 214763, H01L 2940

Patent

active

061566446

ABSTRACT:
Interconnects for semiconductor devices are formed by forming a reaction control layer on a lower conductive layer of a semiconductor device, forming a reactive metal layer on the reaction control layer, opposite the lower conductive layer, reacting the lower conductive layer with the reactive metal layer, through the reaction control layer, to form an ohmic contact for the semiconductor device, and forming an upper conductive layer on the ohmic contact, opposite the lower conductive layer. Interconnects so formed may provide reduced contact resistance and reduced agglomeration of the ohmic contact region, independent of reaction temperatures. The reactive metal layer is preferably a refractory metal and the reaction control layer is preferably a refractory metal compound. The upper conductive layer is also preferably a refractory metal.

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