Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-01-30
2000-08-22
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438614, 438615, 438616, 438617, 29840, 29843, H01L 2144
Patent
active
061071803
ABSTRACT:
A method of forming an interconnect bump structure (32, 33). Under Bumb Metalization 11 (UBM) comprising a chrome layer (16), a copper layer (36), and a tin layer (40) is disclosed. In one embodiment, eutectic solder (45) is then formed over the UBM (11) and reflowed in order to form the interconnect bump stucture. In another embodement, a lead standoff (46) is formed over the UBM (11) before the formation of the eutectic solder (48).
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Flipchip Technologies, Delco/K&S Joint Venture web page with UBM description--http://www.flipchip.com/process.html, "Get bumped", pp. 1-2.
Soichi Honma, et al., "Effectiveness of Thin Film Barrier Metals for Eutectic Solder Bumps", 6 pgs.
Goran Matijasevic, et al., Copper-Tin Multilayer Composite Solder, Dept. of Electrical and Computer Engineering, University of California, Irvine, CA, pp. 264-273, IEPS Proceedings Sep. 12, 1993 San Diego CA.
Eric, Jung, et al., "The Influence of NiSn Intermetallics on the Performance of Flip Chip Contacts Using a Low-Cost Electroless Nickel Bumping Approach", 1996 Proceesings of Int'l. Electronics Pkg. Conf., International Electron Packaging Society, Edina MN, pp. 14-25..
Kevin Hussey, et al., Motorola MMTG MPU Product Analysis, Reliability and Quality Assurance, Product Analysis Report #r000047, 4 pgs.
Greer Stuart E.
Munroe Robert A.
Hill Daniel D.
Motorola Inc.
Niebling John F.
Zarneke David A
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