Method for forming insulation film

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S761000, C438S765000, C438S766000, C438S767000, C438S768000, C438S769000, C438S770000

Reexamination Certificate

active

07446052

ABSTRACT:
In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

REFERENCES:
patent: 5618382 (1997-04-01), Mintz et al.
patent: 5685949 (1997-11-01), Yashima
patent: 6357385 (2002-03-01), Ohmi et al.
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6689284 (2004-02-01), Nakasaki
patent: 2001/0023120 (2001-09-01), Tsunashima et al.
patent: 2002/0001906 (2002-01-01), Park
patent: 2002/0009892 (2002-01-01), Cohen et al.
patent: 2002/0014666 (2002-02-01), Ohmi et al.
patent: 57-67009 (1982-04-01), None
patent: 63-170927 (1988-07-01), None
patent: 11-40397 (1999-02-01), None
patent: 2000-294550 (2000-10-01), None
patent: 2001-111000 (2001-04-01), None
patent: 2001-160555 (2001-06-01), None
patent: 2001-168076 (2001-06-01), None
patent: 2001-217415 (2001-08-01), None
patent: 2001-257344 (2001-09-01), None
patent: 2002-26319 (2002-01-01), None
Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, pp. 161, 514.
Wolf, Silicon Processing for the VLSI Era, 2002, Lattice Press, vol. 4, pp. 145-146.
Rossnagel et al., Handbook of Plasma Processing, 1990, Noyes Publications, p. 198.
Kern, Handbook of Semiconductor Wafer Cleaning Technology, 1993, Noyes Publications, pp. 224-226.
Form PCT/IB/338 (one (1) page) and Form PCT/IPEA/409 (four (4) pages) for a total of (five (5) pages), Jul. 1996.
International Search Report dated Jun. 17, 2003 (two (2) pages).
Notice of Reasons for Rejection (in Japanese) Jun. 20, 2006 (two (2) pages).
Decision of Final Rejection (in Japanese) dated Sep. 19, 2006 (two (2) pages).
Notice of Reasons for Rejection in pretrial examination (in Japanese) dated Apr. 24, 2007 (two (2) pages).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming insulation film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming insulation film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming insulation film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4031261

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.