Method for forming insulation film

Details Method for forming insulation film Method for forming insulation film

2008-04-08

2008-04-08

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S680000, C438S789000, C438S790000, C257SE21279

Reexamination Certificate

active

07354873

ABSTRACT:
A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

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