Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1995-12-27
1998-08-18
Chaudhari, Chandra
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
438424, 438435, H01L 2176
Patent
active
057958114
ABSTRACT:
A method of forming an isolating trench device in a semiconductor device comprising the steps of; sequentially forming a first material layer and a second material layer over a surface of a semiconductor substrate, exposing a portion of the semiconductor substrate in which a device isolation region is to be formed by selectively etching the first and second material layers, forming side wall spacers on exposed lateral sidewalls of the first and second material layers, forming a trench by etching the exposed portion of the semiconductor substrate using the side wall spacers as a mask, depositing an insulating film having an underlayer dependency characteristic over the surface of the resulting structure, etching the surface of the insulating film, and removing the first and second material layers.
REFERENCES:
patent: 4534824 (1985-08-01), Chen
patent: 4551911 (1985-11-01), Sasaki et al.
patent: 4666557 (1987-05-01), Collins et al.
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 4871630 (1989-10-01), Giammarco et al.
patent: 5008210 (1991-04-01), Chiang et al.
patent: 5068202 (1991-11-01), Crotti et al.
patent: 5296092 (1994-03-01), Kim
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5399389 (1995-03-01), Hieber et al.
patent: 5399520 (1995-03-01), Jang
patent: 5406111 (1995-04-01), Sun
patent: 5416041 (1995-05-01), Schwalks
patent: 5424240 (1995-06-01), Han
patent: 5436488 (1995-07-01), Poon et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5518959 (1996-05-01), Jang et al.
patent: 5536681 (1996-07-01), Jang et al.
patent: 5552344 (1996-09-01), Jang et al.
patent: 5563104 (1996-10-01), Jang et al.
patent: 5576576 (1996-11-01), Hawley et al.
patent: 5599740 (1997-02-01), Jang et al.
patent: 5643822 (1997-07-01), Furukawa et al.
Chung Woo-in
Kim Chang-Gyu
Chaudhari Chandra
Samsung Electronics Co,. Ltd.
Whipple Matthew
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