Method for forming insulating films in semiconductor devices

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438424, 438435, H01L 2176

Patent

active

057958114

ABSTRACT:
A method of forming an isolating trench device in a semiconductor device comprising the steps of; sequentially forming a first material layer and a second material layer over a surface of a semiconductor substrate, exposing a portion of the semiconductor substrate in which a device isolation region is to be formed by selectively etching the first and second material layers, forming side wall spacers on exposed lateral sidewalls of the first and second material layers, forming a trench by etching the exposed portion of the semiconductor substrate using the side wall spacers as a mask, depositing an insulating film having an underlayer dependency characteristic over the surface of the resulting structure, etching the surface of the insulating film, and removing the first and second material layers.

REFERENCES:
patent: 4534824 (1985-08-01), Chen
patent: 4551911 (1985-11-01), Sasaki et al.
patent: 4666557 (1987-05-01), Collins et al.
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 4871630 (1989-10-01), Giammarco et al.
patent: 5008210 (1991-04-01), Chiang et al.
patent: 5068202 (1991-11-01), Crotti et al.
patent: 5296092 (1994-03-01), Kim
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5399389 (1995-03-01), Hieber et al.
patent: 5399520 (1995-03-01), Jang
patent: 5406111 (1995-04-01), Sun
patent: 5416041 (1995-05-01), Schwalks
patent: 5424240 (1995-06-01), Han
patent: 5436488 (1995-07-01), Poon et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5518959 (1996-05-01), Jang et al.
patent: 5536681 (1996-07-01), Jang et al.
patent: 5552344 (1996-09-01), Jang et al.
patent: 5563104 (1996-10-01), Jang et al.
patent: 5576576 (1996-11-01), Hawley et al.
patent: 5599740 (1997-02-01), Jang et al.
patent: 5643822 (1997-07-01), Furukawa et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming insulating films in semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming insulating films in semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming insulating films in semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1114252

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.