Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-05-27
2008-05-27
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S765000, C438S769000, C257SE21625, C257SE21639
Reexamination Certificate
active
10527642
ABSTRACT:
A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.
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patent: 6511539 (2003-01-01), Raaijmakers
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
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Aoyama Shintaro
Igeta Masanobu
Shinriki Hiroshi
Lebentritt Michael
Lee Cheung
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
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