Method for forming insulating film and method for...

Details Method for forming insulating film and method for... Method for forming insulating film and method for...

2011-06-14

2011-06-14

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S769000, C438S775000, C438S778000, C438S785000, C438S792000, C257SE21268

Reexamination Certificate

active

07960293

ABSTRACT:
A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N2O atmosphere, and nitriding the silicon oxynitride film.

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