Method for forming hybrid device gates

Details Method for forming hybrid device gates Method for forming hybrid device gates

2006-10-24

2006-10-24

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S299000, C438S301000

Reexamination Certificate

active

07125775

ABSTRACT:
A method for forming self-aligned contact devices in a core region of a semiconductor substrate and non-self-aligned contact devices in a non-core region of the semiconductor substrate is disclosed in which a single gate film stack is used for forming gate structures in both the core region and in the non-core region. A dielectric layer is formed over a semiconductor substrate and a gate film stack is formed over the dielectric layer. The gate film stack is then patterned so as to form gate structures within both the core region and the non-core region.

REFERENCES:
patent: 6518151 (2003-02-01), Dobuzinsky et al.
patent: 6534414 (2003-03-01), Wang et al.
patent: 6790719 (2004-09-01), Adetutu et al.

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