Method for forming highly strained source/drain trenches

Details Method for forming highly strained source/drain trenches Method for forming highly strained source/drain trenches

2009-04-23

2011-12-06

Li, Meiya (Department: 2811)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257S190000, C257S285000, C257S288000, C257SE21060, C257SE21238, C257SE21420, C257SE21431, C257SE21549, C257SE21555, C257SE21585, C438S498000, C438S589000, C438S689000, C438S706000, C438S711000, C438S714000

Reexamination Certificate

active

08071481

ABSTRACT:
A multi-step etching process produces trench openings in a silicon substrate that are immediately adjacent transistor structures formed over the substrate surface. The multi-step etching process is a Br-based etching operation with one step including nitrogen and a further step deficient of nitrogen. The etching process does not attack the transistor structure and forms an opening bounded by upper surfaces that extend downwardly from the substrate surface and are substantially vertical, and lower surfaces that bulge outwardly from the upper vertical sections and undercut the transistor structure. The aggressive undercut produces a desirable stress in the etched silicon surface. The openings are then filled with a suitable source/drain material and SSD transistors with desirable Idsatcharacteristics may then be formed.

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