Method for forming high selectivity protection layer on...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region

Reexamination Certificate

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C438S757000, C438S791000

Reexamination Certificate

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07316970

ABSTRACT:
A method for forming a resist protect layer on a semiconductor substrate includes the following steps. An isolation structure is formed on the semiconductor substrate. An original nitride layer having a substantial etch selectivity to the isolation structure is formed over the semiconductor substrate. A photoresist mask is formed for partially covering the original nitride layer. A wet etching is performed to remove the original nitride layer uncovered by the photoresist mask in such a way without causing substantial damage to the isolation structure. As such, the original nitride layer covered by the photoresist mask constitutes the resist protect layer.

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patent: 5962344 (1999-10-01), Tu et al.
patent: 6093593 (2000-07-01), Jang
patent: 6187655 (2001-02-01), Wang et al.
patent: 6346449 (2002-02-01), Chang et al.
patent: 6348389 (2002-02-01), Chou et al.
Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1: Process Technology; Lattice Press; 1986; Sunset Beach, CA; pp. 169 and 194.

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