Method for forming hard mask patterns having a fine pitch...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S041000, C216S058000, C216S083000

Reexamination Certificate

active

07998874

ABSTRACT:
A method for forming hard mask patterns includes, sequentially forming first, second, and third hard mask layers formed of materials having different etching selectivities on a substrate, forming first sacrificial patterns having a first pitch therebetween on the third hard mask layer, forming fourth hard mask patterns with a second pitch between the first sacrificial patterns, the second pitch being substantially equal to about ½ of the first pitch, patterning the third hard mask layer to form third hard mask patterns using the fourth hard mask patterns as an etch mask, patterning the second hard mask layer to form second hard mask patterns using the third and fourth hard mask patterns as an etch mask, and patterning the first hard mask layer to form first hard mask patterns with the second pitch therebetween using the second and third hard mask patterns as an etch mask.

REFERENCES:
patent: 5891799 (1999-04-01), Tsui
patent: 6239008 (2001-05-01), Yu et al.
patent: 6403417 (2002-06-01), Chien et al.
patent: 6790770 (2004-09-01), Chen et al.
patent: 7202174 (2007-04-01), Jung et al.
patent: 7256126 (2007-08-01), Chen
patent: 7312158 (2007-12-01), Miyagawa et al.
patent: 2003/0027420 (2003-02-01), Lai et al.
patent: 2003/0207584 (2003-11-01), Sivakumar et al.
patent: 2004/0017989 (2004-01-01), So
patent: 2004/0266098 (2004-12-01), Huang et al.
patent: 2005/0040134 (2005-02-01), Temmler et al.
patent: 2005/0269702 (2005-12-01), Otsuka
patent: 2006/0046484 (2006-03-01), Abatchev et al.
patent: 2006/0234166 (2006-10-01), Lee et al.
patent: 2006/0263699 (2006-11-01), Abatchev et al.
patent: 2007/0123037 (2007-05-01), Lee et al.
patent: 2008/0026541 (2008-01-01), Edelstein et al.
patent: 2008/0048340 (2008-02-01), Lee et al.
patent: 2008/0131793 (2008-06-01), Lee et al.
patent: 2006-261307 (2006-09-01), None
patent: 10-0155880 (1998-07-01), None
patent: 1998-0025458 (1998-07-01), None
patent: 10-0165399 (1998-09-01), None
patent: 10-2003-0050172 (2003-06-01), None
patent: 10-2004-0055459 (2004-06-01), None
patent: 10-2006-0000678 (2006-01-01), None
patent: 10-0574999 (2006-04-01), None
patent: 10-2006-0110097 (2006-10-01), None
patent: 10-0672123 (2007-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming hard mask patterns having a fine pitch... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming hard mask patterns having a fine pitch..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming hard mask patterns having a fine pitch... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2726676

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.