Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-08-16
2011-08-16
Norton, Nadine G (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C216S041000, C216S058000, C216S083000
Reexamination Certificate
active
07998874
ABSTRACT:
A method for forming hard mask patterns includes, sequentially forming first, second, and third hard mask layers formed of materials having different etching selectivities on a substrate, forming first sacrificial patterns having a first pitch therebetween on the third hard mask layer, forming fourth hard mask patterns with a second pitch between the first sacrificial patterns, the second pitch being substantially equal to about ½ of the first pitch, patterning the third hard mask layer to form third hard mask patterns using the fourth hard mask patterns as an etch mask, patterning the second hard mask layer to form second hard mask patterns using the third and fourth hard mask patterns as an etch mask, and patterning the first hard mask layer to form first hard mask patterns with the second pitch therebetween using the second and third hard mask patterns as an etch mask.
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Jeon Kyung-yub
Kim Myeong-Cheol
Koh Cha-won
Lee Hak-sun
Lee Ji-Young
Lee & Morse P.C.
Lin Patti
Norton Nadine G
Samsung Electronics Co,. Ltd.
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