Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-25
1999-11-02
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438254, H01L 218242
Patent
active
059769300
ABSTRACT:
A method for forming gate segments in an integrated circuit. The method begins by forming a shallow trench isolation region outwardly from a layer of semiconductor material to isolate a plurality of active regions of the integrated circuit. After the isolation region is formed, at least one gate segment is formed in each active region by depositing, planarizing and selectively etching a conductive material. Source/drain regions are also formed in the active region. The active regions are selectively interconnected with edge-defined conductors that pass outwardly from the gate segments and the shallow trench isolation region to form the integrated circuit.
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Chang Joni
Micro)n Technology, Inc.
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