Method for forming gate oxide layer in semiconductor device

Details Method for forming gate oxide layer in semiconductor device Method for forming gate oxide layer in semiconductor device

2008-03-04

2008-03-04

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27084

Reexamination Certificate

active

11024466

ABSTRACT:
A method for forming gate oxide layers of a semiconductor device including defining a first, a second, and a third device region by forming device isolation regions on a semiconductor substrate. The method also includes forming a sacrificing dielectric layer on the substrate, removing the sacrificing dielectric layer on the first device region by selective etching, and forming a first gate oxide layer by oxidizing the first device region. The method further includes removing the sacrificing dielectric layer on the second and third device regions, forming a second gate oxide layer on the second and third device region by oxidizing the substrate, forming a photoresist pattern exposing the third device region and covering the first and second device regions, and forming a third gate oxide layer by oxidizing the third device region.

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