Method for forming gate of semiconductor device

Details Method for forming gate of semiconductor device Method for forming gate of semiconductor device

2005-12-19

2008-10-07

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S197000, C257SE25012, C257SE27016

Reexamination Certificate

active

07432143

ABSTRACT:
There is provided a method for forming a gate using a gate layout of a semiconductor device. The layout includes an active region with a stepped side boundary, a plurality of gates crossing over the active region, and tabs attached to the gates on the side boundary of the active region, wherein two tabs adjacent by a topology of the stepped side boundary are disposed in an oblique direction. The gates can be patterned.

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