Method for forming field oxide regions

Details Method for forming field oxide regions Method for forming field oxide regions

1994-12-28

1997-08-26

Picardat, Kevin M.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438261, 438264, 438400, H01L 2170

Patent

active

056610602

ABSTRACT:
A Flash EEPROM memory array and method for making the same is provided. The memory array has rectangularly shaped field oxide regions. A field oxide layer is grown on a substrate having p-wells. The field oxide layer is selectively etched to provide the resulting field oxide regions. Subsequent method steps provide tunnel oxide regions, floating gates oxide-nitride-oxide layers, bit lines, oxide spacers and word lines, word line to metal dielectric, contacts, metal and passivation.

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