Method for forming field oxide

Details Method for forming field oxide Method for forming field oxide

2007-05-01

2007-05-01

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21552, C438S773000

Reexamination Certificate

active

11204479

ABSTRACT:
A method for forming a field oxide is disclosed. In one embodiment, the method comprises providing a semiconductor structure having a substrate, a pad oxide, and a patterned barrier layer, performing a dry oxidation process to form a first field oxide on the substrate in a region not covered with the barrier layer by introducing pure dry oxygen, and performing a wet oxidation process to form a second field oxide adjacent the first field oxide by introducing hydrogen and oxygen. The method of the present invention can improve the quality and electrical property of the semiconductor device, increase the yield, and reduce the cost.

REFERENCES:
patent: 4551910 (1985-11-01), Patterson
patent: 5128730 (1992-07-01), Coe et al.
patent: 5817581 (1998-10-01), Bayer et al.
patent: 5972779 (1999-10-01), Jang
patent: 5985738 (1999-11-01), Jang et al.
patent: 6033991 (2000-03-01), Ramkumar et al.
patent: 6153481 (2000-11-01), Jang et al.
patent: 6440819 (2002-08-01), Luning
patent: 2001/0055862 (2001-12-01), Bevk

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