Method for forming field effect transistors having different thr

Details Method for forming field effect transistors having different thr Method for forming field effect transistors having different thr

1997-07-31

1999-05-25

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438308, H01L 218234

Patent

active

059077778

ABSTRACT:
The preferred embodiment provides a method for fabricating field effect transistors that have different threshold voltages without requiring excessive masking and other fabrication steps. In particular, the method facilitates the formation of FETs with different threshold voltages by doping the gate dielectric with various amounts of ions. This provides a built in potential in the gate dielectric proportional to the amount of ions in the gate dielectric. This potential changes the threshold voltage of the FET. Thus, by selectively doping the gate dielectric with ions the threshold voltage of a FET can be changed. The selective doping of many FETs to many different threshold voltages can be done with only one additional masking step. Thus, the present invention provides the ability to form FETs having different threshold voltages without requiring excessive process complexity.

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