Method for forming ferroelectric thin film and apparatus therefo

Details Method for forming ferroelectric thin film and apparatus therefo Method for forming ferroelectric thin film and apparatus therefo

1996-10-03

1997-09-23

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

118 50, 118723I, 118723VE, 4271263, 4272553, 427294, 427307, 427569, H05H 125

Patent

active

056702183

ABSTRACT:
A ferroelectric thin film superior in coatability, fineness of structure and uniformity of composition, is obtained by a method comprised of inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power in order for them to participate in a deposition reaction; setting an optimal process condition in which the ions dissociated from the reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; supplying the reactant materials through conduits, a manifold and a shower head to a reactor without deterioration, the manifold collecting the reactant materials, the shower head serving to spray the mixed reactant materials; and depositing a ferroelectric thin film in the reactor while purging residual gas from the conduits.

REFERENCES:
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5489548 (1996-02-01), Nishioka et al.

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