Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-20
2009-11-24
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C257SE21663, C257SE21664
Reexamination Certificate
active
07622346
ABSTRACT:
A ferroelectric capacitor formation method necessary for stably fabricating an FeRAM and a semiconductor device fabrication method. After a PZT film is deposited on a lower electrode layer, the PZT film is crystallized by performing heat treatment in an atmosphere of a mixed gas which contains O2gas and Ar gas. In this case, the flow rate of the O2gas is controlled by one mass flow controller. The flow rate of the Ar gas used for purging and the flow rate of the Ar gas used for adjusting O2gas concentration are controlled by different mass flow controllers. Before raising the temperature, the O2gas, the Ar gas used for purging, and the Ar gas used for adjusting O2gas concentration are made to flow at predetermined flow rates. Only the Ar gas used for purging is stopped, raising the temperature is begun, and the heat treatment is performed. At this time the O2gas and the Ar gas used for adjusting O2gas concentration flow at the predetermined flow rates. As a result, an atmosphere in which the heat treatment is performed for crystallizing the PZT film can be stabilized. Accordingly, a ferroelectric capacitor having predetermined performance is stably formed and an FeRAM is stably fabricated.
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Fujiki Mitsushi
Komuro Genichi
Matsuura Katsuyoshi
Fujitsu Microelectronics Limited
Nguyen Khiem D
Westerman Hattori Daniels & Adrian LLP
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