Method for forming enhanced areal density split gate field...

Details Method for forming enhanced areal density split gate field... Method for forming enhanced areal density split gate field...

2005-08-23

2005-08-23

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06933198

ABSTRACT:
A method for forming a floating gate electrode within a split gate field effect transistor device provides for isotropically processing a blanket isotropically processable material layer having a patterned mask layer formed thereover to form a patterned isotropically processed material layer which encroaches beneath the patterned mask layer. The patterned isotropically processed material layer may then be employed as a mask for forming a floating gate electrode from a blanket floating gate electrode material layer. The method provides for forming adjacent floating gate electrodes with less than minimally photolithographically resolvable separation.

REFERENCES:
patent: 5970371 (1999-10-01), Hsieh et al.
patent: 6207503 (2001-03-01), Hsieh et al.
patent: 6284596 (2001-09-01), Sung et al.
patent: 6329245 (2001-12-01), Da et al.
patent: 6482700 (2002-11-01), Chen et al.
patent: 6486032 (2002-11-01), Lin et al.
patent: 6498030 (2002-12-01), Hsieh
patent: 6541339 (2003-04-01), Lin et al.
patent: 2002/0187608 (2002-12-01), Tseng
Wolf, “Silicon Processing for the VLSI Era vol. 2: Process Integration”, pp. 20 and 23-25, 1990, Lattice Press.

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