Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-10-04
1997-04-08
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438702, 438666, 438742, 438975, H01L 2128
Patent
active
056187530
ABSTRACT:
A method for forming an electrode on a mesa structure of a semiconductor substrate. The method comprises the steps of: selectively forming an electrode on a predetermined area in a surface of the semiconductor substrate; and subjecting the substrate to a selective etching by use of the electrode as a mask to form a mesa structure on the substrate so that the mesa structure is self-aligned just under the electrode.
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Bilodeau Thomas G.
NEC Corporation
Niebling John
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