Method for forming electrical isolation for semiconductor device

Details Method for forming electrical isolation for semiconductor device Method for forming electrical isolation for semiconductor device

1998-06-16

2000-06-13

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438400, 438424, H01L 218238

Patent

active

060749032

ABSTRACT:
A method for forming a electrically isolated semiconductor devices in a silicon body. A trench is formed in a selected region of the body. A barrier material is deposited over sidewalls of the trench. Portions of the barrier material are removed from a first sidewall portion of the trench to expose such first sidewall portion of the trench while leaving portions of such barrier material on a second sidewall portion of the trench to form a barrier layer thereon. A dielectric material is deposited in the trench, a portion of dielectric material being deposited on the exposed first sidewall portion of the trench and another portion of such deposited dielectric material being deposited on the barrier material. The dielectric material is annealed in an oxidizing environment to densify such deposited dielectric material, the barrier layer inhibiting oxidation of the said second sidewall portion of the trench. A plurality of the semiconductor devices is formed in the silicon body with such devices being electrically isolated by the dielectric material in the trench.

REFERENCES:
patent: 4571819 (1986-02-01), Rogers et al.
patent: 5879980 (1999-03-01), Selcuk et al.
patent: 5880006 (1999-03-01), Lin et al.

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