Method for forming dynamic random access memory device with an u

Details Method for forming dynamic random access memory device with an u Method for forming dynamic random access memory device with an u

1999-11-12

2000-11-14

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438303, 438291, H01L 21336

Patent

active

061469556

ABSTRACT:
A Method for forming a dynamic random access memory device with an ultra-short channel and an ultra-shallow junction is described in the invention. In the invention, the spacer is used as a mask to define the channel length of the device, so that the channel length of the device is not limited by the resolution of the photolithography process, and the performance of the device is improved thereby. Furthermore, an inversion layer serves as a junction to reduce the electric field; thus, the reliability of the device is increased.

REFERENCES:
patent: 5750430 (1998-05-01), Son
patent: 5874341 (1999-02-01), Gardner et al.
patent: 5899719 (1999-05-01), Hong
patent: 6015746 (2000-01-01), Yeh et al.
patent: 6025232 (2000-02-01), Wu et al.

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