Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-29
2011-03-29
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S675000, C257SE21585, C257SE21627, C257SE21677
Reexamination Certificate
active
07915164
ABSTRACT:
The invention provides for polysilicon vias connecting conductive polysilicon layers formed at different heights. Polysilicon vias are advantageously used in a monolithic three dimensional memory array of charge storage transistors. Polysilicon vias according to the present invention can be used, for example, to connect the channel layer of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells formed above the first device level. Similarly, vias according to the present invention can be used to connect the wordline of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells.
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Konevecki Michael W.
Kumar Tanmay
Mahajani Maitreyee
Nallamothu Sucheta
Raghuram Usha
SanDisk 3D LLC
Taylor Earl N
Vierra Magen Marcus & DeNiro LLP
Vu David
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