Method for forming doped polysilicon via connecting...

Details Method for forming doped polysilicon via connecting... Method for forming doped polysilicon via connecting...

2011-03-29

2011-03-29

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S368000, C257SE21585, C257SE21627, C257SE21677

Reexamination Certificate

active

07915163

ABSTRACT:
The invention provides for polysilicon vias connecting conductive polysilicon layers formed at different heights. Polysilicon vias are advantageously used in a monolithic three dimensional memory array of charge storage transistors. Polysilicon vias according to the present invention can be used, for example, to connect the channel layer of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells formed above the first device level. Similarly, vias according to the present invention can be used to connect the wordline of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells.

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