Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1997-05-29
1998-07-21
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272551, 427255, 438684, 438764, C23C 1622
Patent
active
057832579
ABSTRACT:
A number of wafers are loaded into a reaction vessel on a wafer boat; monosilane gas, phosphine gas and N.sub.2 O gas are supplied to form amorphous silicon film doped with, e.g., phosphorus; and then the wafers are annealed in, e.g., a different reaction tube to polycrystallize the amorphous silicon film. Os (Oxygen) generated by decomposition of N.sub.2 O are taken into the film. The Os become nuclei of the silicon crystals, and the crystals become fine and have size uniformity. As a result, high uniformity of resistance values of micronized devices of the polysilicon film can be obtained. Resistance values of the polysilicon film can be easily controlled by addition of oxygen. As a result, high uniformity of resistance values of micronized devices of the polysilicon film can be obtained.
REFERENCES:
patent: 4441249 (1984-04-01), Alspector et al.
patent: 5080933 (1992-01-01), Grupen-Shemansky et al.
English-language Abstract for Japanese KOKAI No. 62-99463.
English-language Abstract for Japanese KOKAI No. 62-226631.
Hasebe Kazuhide
Shigematsu Nobuaki
Shishiguchi Seiichi
Electron Tohoku Limited
King Roy V.
NEC Corporation
Tokyo Electron Limited
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