Method for forming distributed barrier compound semiconductor co

Details Method for forming distributed barrier compound semiconductor co Method for forming distributed barrier compound semiconductor co

1988-10-03

1992-03-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437190, 437202, 437247, 357 67, 357 71, H01L 2144, H01L 2148

Patent

active

050988590

ABSTRACT:
The control of barriers to carrier flow in a contact between a metal and a higher band gap semiconductor employing an intermediate lower band gap semiconductor with doping and greater than 1.5% lattice mismatch. A WSi metal contact of doped InAs on GaAs of 7.times.10.sup.-6 ohm/cm.sup.2 is provided.

REFERENCES:
patent: 4398963 (1983-08-01), Stall et al.
patent: 4558336 (1985-12-01), Chang et al.
patent: 4583110 (1986-04-01), Jackson et al.
patent: 4794444 (1988-12-01), Liu et al.

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