Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-07
2010-10-05
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S070000, C257SE21530
Reexamination Certificate
active
07807566
ABSTRACT:
A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si—CH3 bonding strength to Si—O bonding strength of the film as formed in step (i); (iii) if the ratio is 2.50 % or higher, confirming the conditions, and if the ratio is less than 2.50 %, changing the conditions by changing at least one of the susceptor temperature, the distance between upper and lower electrodes, the RF power, and the curing time; and (iv) repeating steps (i) to (iii) until the ratio is 2.50 % or higher.
REFERENCES:
patent: 6846515 (2007-10-01), Vrtis et al.
patent: 2005/0006665 (2005-01-01), Ohnishi et al.
Tsang et al. “Comparative studies of physical and chemical properties of plasma-treated CVD low k SiOCH dielectrics.” Thin Solid Films 462-463 (2004), pp. 269-274.
Kemeling et al. “A robust k ˜ 2.3 SiCOH low-k film formed by porogen removal with UV-cure.” Microelectronic Engineering 84 (May 2007), pp. 2575-2581.
Lee et al. “Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-k SiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition.” vol. 46, #2 (Feb. 2007) pp. 536-541.
Kato Manabu
Matsushita Kiyohiro
Takamure Noboru
Tsuji Naoto
ASM Japan K.K.
Ida Geoffrey
Knobbe Martens Olson & Bear LLP
Le Thao X
LandOfFree
Method for forming dielectric SiOCH film having chemical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming dielectric SiOCH film having chemical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming dielectric SiOCH film having chemical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4198635