Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2011-08-23
2011-08-23
Chen, Bret (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S578000, C427S579000, C427S376200, C427S397700
Reexamination Certificate
active
08003174
ABSTRACT:
A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.
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Fukazawa Atsuki
Lee Woo Jin
Matsuki Nobuo
ASM Japan K.K.
Chen Bret
Knobbe Martens Olson & Bear LLP
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