Method for forming deep trench capacitor with liquid phase...

Details Method for forming deep trench capacitor with liquid phase... Method for forming deep trench capacitor with liquid phase...

2005-03-15

2005-03-15

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000

Reexamination Certificate

active

06867091

ABSTRACT:
A method for forming a deep trench capacitor mainly utilizes a liquid phase deposition (LPD) oxide to form a collar oxide layer in the trench, followed by forming a conductive layer serving as an upper electrode of the deep trench capacitor, thereby avoiding collar oxide residue in the conductive layer and thus forming good electrical connection. And, the method of the present invention does not need a dry etch to remove the unnecessary collar oxide layer such that the process can be simplified.

REFERENCES:
patent: 6245612 (2001-06-01), Chang et al.
patent: 6767786 (2004-07-01), Lin et al.

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