Method for forming deep depletion mode dynamic random access mem

Details Method for forming deep depletion mode dynamic random access mem Method for forming deep depletion mode dynamic random access mem

1997-04-07

2000-04-25

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438267, 438303, H01L 218242

Patent

active

060543450

ABSTRACT:
A semiconductor memory device for receiving a charge, includes a substrate, a transfer gate overlying the substrate, a storage device coupled to the transfer gate, a deep depleted region formed in the substrate under the storage means, and a bit line for initially receiving the charge and the substrate receiving the charge via the transfer gate. The substrate is highly resistive in a deep depletion mode, if no charge is stored therein, and has a relatively low resistivity in a charged state. Further, a process of forming a semiconductor memory device, includes depositing a first gate oxide over a substrate having a trench and depositing a nitride over the first gate oxide, forming openings in the nitride down to the gate oxide, and depositing polysilicon over the nitride and etching first spacers in the polysilicon along the sidewalls of the openings in the nitride. A second polysilicon material is deposited over the first spacers and substrate and second spacers are formed in the second polysilicon material. A contact window is opened between first and second ones of the first spacers and a highly doped polysilicon is deposited in the contact window. A contact is formed over the highly doped polysilicon.

REFERENCES:
patent: 5565372 (1996-10-01), Kim
patent: 5672532 (1997-09-01), Hsue et al.

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