Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-04-29
1997-05-27
Dang, Trung
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438699, 438703, 438636, H01L 21465
Patent
active
056332106
ABSTRACT:
A method for forming damage free patterned layers adjoining the edges of high step height apertures within integrated circuits. There is first provided a semiconductor substrate which has a first aperture formed therein. Formed upon the semiconductor substrate and into the first aperture is a blanket layer. The blanket layer has a second aperture formed therein where the blanket layer is formed into the first aperture. Formed then into the second aperture is a buffer layer. The buffer layer substantially planarizes the blanket layer. Formed then upon the semiconductor substrate is a blanket photoresist layer. The blanket photoresist layer and the blanket layer are then sequentially patterned to form a patterned photoresist layer and a damage free patterned layer.
REFERENCES:
patent: 5324689 (1994-06-01), Yoo
patent: 5326727 (1994-07-01), Kook et al.
S. Wolf, "Silicon Processing for the VLSI Era--vol. 1" Lattice Press, Sunset Beach, CA, p. 441.
Chang Wen C.
Chen Sen F.
Chu Po-Tau
Yang Bao R.
Dang Trung
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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