Method for forming cylindrical capacitor lower plate in semicond

Details Method for forming cylindrical capacitor lower plate in semicond Method for forming cylindrical capacitor lower plate in semicond

1997-02-28

1999-01-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438398, H01L 218242

Patent

active

058588345

ABSTRACT:
In a method for forming a cylindrical capacitor lower plate in a semiconductor device, a first insulating film, a first conducting film and a second insulating film are formed on a principal surface of a semiconductor substrate in the named order. A patterned photoresist film is formed on the second insulating film, and the second insulating film is patterned by an anisotropic etching using the photoresist film as a mask. After the photoresist film is removed, the first conducting film is patterned by an etching using the patterned second insulating film as a mask. Thereafter, a second conducting film is deposited on a whole surface, and then, the second conducting film is anisotropically etched so that a remaining second conducting film is left on a side surface of the patterned first conducting film. The patterned second insulating film is removed, so that the remaining second conducting film is left in the form of a sidewall which is upright from a periphery of the patterned first conducting film.

REFERENCES:
patent: 5284787 (1994-02-01), Ahn
patent: 5408114 (1995-04-01), Kinoshita et al.
patent: 5448512 (1995-09-01), Hachisuka et al.
patent: 5476807 (1995-12-01), Lee et al.
patent: 5481127 (1996-01-01), Ogawa

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