Method for forming CoWRe alloys by electroless deposition

Details Method for forming CoWRe alloys by electroless deposition Method for forming CoWRe alloys by electroless deposition

2007-04-17

2007-04-17

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S679000, C438S618000, C438S686000

Reexamination Certificate

active

10703769

ABSTRACT:
A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.

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