Method for forming copper bump antioxidation surface

Details Method for forming copper bump antioxidation surface Method for forming copper bump antioxidation surface

2006-03-07

2006-03-07

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S678000, C438S687000

Reexamination Certificate

active

07008867

ABSTRACT:
A method for forming a copper bump for flip chip bonding having improved oxidation resistance and thermal stability including providing a copper column having a thickness of at least about 40 microns overlying a metallurgy including an uppermost copper metal layer and a lowermost titanium layer the lowermost titanium layer in contact with an exposed copper bonding pad portion surrounded by a passivation layer; and, selectively depositing at least one protective metal layer over the copper column according to an electrolytic deposition process.

REFERENCES:
patent: 6107186 (2000-08-01), Erb
patent: 6731003 (2004-05-01), Joshi et al.
patent: 6740577 (2004-05-01), Jin et al.

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