Method for forming contact opening

Details Method for forming contact opening Method for forming contact opening

2007-11-13

2007-11-13

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S715000, C438S736000, C438S623000, C438S694000, C438S780000, C438S781000

Reexamination Certificate

active

11308872

ABSTRACT:
The present invention relates to a method for forming a contact opening. First, a substrate having at least a dielectric layer formed thereon is provided. Then, a photoresist layer having a first opening is formed on the dielectric layer. A plasma etching operation is performed to form a second opening in the dielectric layer, and the first opening is located above the second opening. The bottom part of the first opening has a diameter smaller than that of the top part of the second opening. Thereafter, the photoresist layer is removed from the dielectric layer. Accordingly, at least a portion of the exposed contact opening will not be oxidized to prevent an increase in the resistance between the conductive pattern and the conductive layer that fills in the contact opening.

REFERENCES:
patent: 5672241 (1997-09-01), Tien et al.
patent: 5780356 (1998-07-01), Kim
patent: 6723647 (2004-04-01), Kim et al.
patent: 7125793 (2006-10-01), Liou et al.
patent: 2003/0209726 (2003-11-01), Shigeno
patent: 2000-012863 (2000-01-01), None
patent: 2002-182241 (2002-06-01), None
S. Rossnagel, Handbook of Plasma Processing Technology, (1990) Noyes Publications, p. 198.

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