Method for forming contact of semiconductor device

Details Method for forming contact of semiconductor device Method for forming contact of semiconductor device

2006-05-02

2006-05-02

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07037821

ABSTRACT:
A method for forming a contact of a semiconductor deices is disclosed. More specifically, in the method for forming a contact of a semiconductor device, an interlayer dielectric (hereinafter, referred to as “ILD”) layer is polished using a CMP slurry having high selectivity to an oxide film in a STI (shallow trench isolation) etching process for forming a line-type storage node contact (hereinafter, referred to as “SNC”, and an ILD layer having a predetermined thickness is re-formed on the semiconductor substrate to secure a sufficient etching margin to a subsequent etching process, thereby preventing loss of a hard mask nitride film of a bit line and reducing fail of a self-aligned contact (hereinafter, referred to as “SAC”) between a storage node and a bit line.

REFERENCES:
patent: 5953609 (1999-09-01), Koyama et al.
patent: 6303506 (2001-10-01), Nojo et al.
patent: 6521934 (2003-02-01), Yasuda
patent: 6660573 (2003-12-01), Han
S.Wolf et al., “Silicon Processing For VLSI Era”, vol. 1, pp. 399, 340, 1986.

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