Method for forming contact hole using dry and wet etching...

Details Method for forming contact hole using dry and wet etching... Method for forming contact hole using dry and wet etching...

2011-03-22

2011-03-22

Deo, Duy-Vu N (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S702000, C438S734000

Reexamination Certificate

active

07910485

ABSTRACT:
A method for forming a contact hole in a semiconductor device includes forming an insulation layer over a substrate, forming a hard mask pattern over the insulation layer, forming a first contact hole by partially etching the insulation layer, forming a spacer on sidewalls of the first contact hole, forming a second contact hole to expose the substrate by etching the remaining insulation layer within the first contact hole, forming a third contact hole by horizontally etching the second contact hole, wherein a line width of the third contact hole is wider than that of the first contact hole, and removing the hard mask pattern and the spacer.

REFERENCES:
patent: 6190988 (2001-02-01), Furukawa et al.
patent: 6403412 (2002-06-01), Economikos et al.
patent: 6602794 (2003-08-01), Kye
patent: 403280449 (1991-12-01), None
patent: 10-2006-0064273 (2006-06-01), None

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