Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-12-07
2000-09-26
Fourson, George
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438654, 438656, 438672, H01L 21283
Patent
active
061242039
ABSTRACT:
The present invention provides a method for forming barrier layers in a channel or via opening by using a plasma etching technique to etch back the barrier layer which reduces the electrical resistance of the barrier layer, maintains its barrier effectiveness and enhances the subsequent filling of the channel or via opening by conductive materials.
REFERENCES:
patent: 5861344 (1999-01-01), Roberts et al.
patent: 5963832 (1999-10-01), Srinivasan et al.
Brown Dirk
Chan Simon S.
Joo Young-Chang
Advanced Micro Devices , Inc.
Fourson George
Garcia Joannie A
Ishimaru Mikio
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