Method of removing copper oxide within via hole

Details Method of removing copper oxide within via hole Method of removing copper oxide within via hole

1998-07-09

2000-09-26

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438906, 438745, H01L 2144

Patent

active

061242047

ABSTRACT:
A method of removing a copper oxide layer within a via hole. A copper layer is formed. A dielectric layer is formed on the copper layer. A via hole is formed to penetrate through the dielectric layer and expose a part of the copper layer within the via hole. The exposed copper layer reacts with oxygen in air to form a copper oxide layer. Using 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, the copper oxide layer is removed.

REFERENCES:
S. E. Beck, et al. "Chenical vapor cleaning of transition metals from wafer surfaces", Proc. Third International Symp. on Ultra Clean Processing pp 257-260, (abstract only), Sep. 1996.

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